surface recombination velocity
英 [ˈsɜːfɪs ˌriːˌkɒmbɪˈneɪʃən vəˈlɒsəti]
美 [ˈsɜːrfɪs ˌriˌkɑmbəˈneɪʃən vəˈlɑːsəti]
网络 表面复合速率; 表面复合速度; 合速率; 表面重合速率; 表面再结合速率
双语例句
- An extensive study has been carried out on the effect of thermal annealing on carrier lifetime and surface recombination velocity, which affect the final output of the solar cell.
我们又进一步研究了退火对少数载流子寿命和表面复合速率的影响，因为其对太阳能电池的最终效率影响很大。 - Simultaneously, defects in the passivation layer of the device surface are also increased with the increasing of the baking temperature and also the surface recombination velocity.
同时芯片表面钝化层内的缺陷数目也在温度作用下增加，引起芯片表面复合速度增加。 - When the surface hole recombination velocity and defect density is bigger, the length of nanowire should not be too long.
当表面复合速率和体缺陷密度较大时，纳米柱的长度不宜过大。 - Application of Photovoltaic Method to Determination of the Surface Recombination Velocity: N type GaAs
N型GaAs单晶表面复合速度的宽谱光伏测算 - Research on surface and grain boundary passivation mechanism obtained effects of surface recombination on crystalline silicon solar cell performance and the theoretical expression of grain boundary recombination velocity.
钝化机理研究获得了表面复合对不同表面掺杂浓度晶体硅太阳电池性能的影响、表面和界面复合速度的理论表达式； - It was found that the role of the high order modes can be considerably minimized by using penetrating light, sample of large size and low surface recombination velocity. The bulk lifetime of the filament can than be more accurately determined.
在测量时使用贯穿光、大尺寸样品、及使样品表面复合速度较低时，高次模的作用可以减少，因而能准确测得体寿命。 - After the ultraviolet irradiation, it is observed that the surface recombination velocity and the sample resistance are increased, the bulk minority lifetime is decreased.
紫外辐照使碲镉汞样品的电阻明显增大，样品的表面复合速度上升，少子体寿命下降。说明紫外辐射不仅对碲镉汞样品的表面有影响，而且对碲镉汞体内也有影响。 - The effective surface recombination velocity at the interface of diffused n+ n high-low junction in solar cells
太阳电池扩散N~+N高低结界面的有效表面复合速度 - The calculation shows that, for normal surface recombination velocity, the optimum thickness of p-type InSb at 77 ° K is about 3 μ m.
计算表明，77°K、P型InSb光导器件，在通常的表面复合速度下，最佳厚度约3μm。 - Effects of Surface Recombination Velocity and Junction Depth on the Performance of n~+-p Diffused Junction Silicon Solar Cells
表面复合速度和结深对硅扩散n~+-p结太阳电池性能的影响 - A numerical method is used to study the function relationships of the open-circuit voltage of induced-junction solar cells with substrate doping, charges in the insulator layer and surface recombination velocity.
本文应用数值计算方法研究了感应反型层太阳电池的开路电压与衬底掺杂水平、介质层固定正电荷密度及表面复合速度等的函数关系。 - The Solution and Application of Minority Carrier Continuity Equation for a Semiconductor Wafer with Different Surface Recombination Velocity
有相异表面复合速度时半导体薄片少子连续方程的解及应用 - A method for the extraction of diffusion length and surface recombination velocity of gap from EBIC line scan
EBIC测定GaP的少子扩散长度和表面复合速度 - The Theoretical Analyzation and Calculation About the Effects of Grain Size, Thickness and Back Surface Recombination Velocity on the Performances of Poly Si Thin Film MIS Schottky Solar Cells
晶粒度、厚度和背表面复合速度对MISSchottky势垒多晶Si薄膜太阳电池性能影响的理论分析和计算 - Study on Surface Recombination Velocity and Diffusion Length in Semiconductors by Microwave Photoconductivity Spectrum
用微波光电导谱研究半导体薄片的少子扩散长度和表面复合速度